López, F. E.; Reyes Gómez, E.; Brandi, H. S.; Porras Montenegro, Nelson; Oliveira, L. E. (2009-05)
Abstract:The effects of a laser field on the conduction-electron effective Landé g factor in GaAs–Ga1−xAlxAs quantum wells and quantum-well wires under applied magnetic fields are studied within the effective-mass approximation. The interaction between the laser field and the semiconductor heterostructure is taken into account via a renormalization of the semiconductor energy gap and conduction-electron effective mass. Calculations are performed for the conduction-electron Landé factor and g-factor anisotropy by considering the non-parabolicity and anisotropy of the conduction band. Theoretical results are obtained as functions of the laser intensity, detuning and geometrical parameters of the low-dimensional semiconductor heterostructures, and indicate the possibility of manipulating and tuning the conduction-electron g factor in heterostructures by changing the detuning and laser-field intensity.
Es proyecto?:no
Autor:López, F. E.
Programa Nal. Colciencias:Programa nacional de ciencias básicas
Insitución cofinanciadora:Departamento Administrativo de Ciencia, Tecnología e Innovación [CO] Colciencias
Institución participante:Universidad del Valle, Univalle
Tipo de producto resultado de investigación:info:eu-repo/semantics/article
Fecha:2009-05
Proyecto id:1106-452-21296
Nombre de proyecto principal:Control cuántico de las propiedades electrónicas y de espín en nanoestructuras inorgánicas, orgánicas y biológicas
Comunidad vinculada:Comunidad científica colombiana