Aluminum concentration and magnetic field effects on the Landé g factor in GaAs–(Ga,Al)As cylindrical quantum well wires

Abstract

We have performed a theoretical study of the Aluminum concentration and axis-parallel applied magnetic-field effects on the conduction-electron Landé g factor in GaAs–(Ga,Al)As cylindrical quantum well wires. Numerical calculations are performed by using the Ogg–McCombe effective Hamiltonian, which includes nonparabolicity and anisotropy effects for the conduction-band electrons. The quantum wire is assumed to consist of an infinite length cylinder of GaAs, surrounded by Ga1−xAlxAs barrier. Theoretical results are given as functions of the Al concentration, radius and applied magnetic fields. We have studied the competition between the quantum-confinement (geometrical and barrier-potential confinements) and the magnetic field, finding that in this type of heterostructure the effects of the applied magnetic field are very small as compared with the Al concentration and geometrical-confinement effects. Present theoretical results are in very good agreement with previous theoretical findings for x=0.35.